Further theoretical refinements of BH’s model have been proposed to underline the secondary effect of local curvature-dependent sputtering, ion beam-induced smoothing, and hydro-dynamical contribution [7, 8]. BH’s linear and its extended models explain many experimental observations but suffered many limitations also [9–11]. Investigations TSA HDAC chemical structure by Madi et al. [11] and Norris et al. [12] showed that the ion impact-induced mass redistribution is the prominent cause of surface patterning and smoothening for high and low angles, respectively. Castro et al. [13, 14] proposed the generalized framework of hydrodynamic approach, which considers ion impact-induced

stress causing a solid flow inside the amorphous layer. They pointed out that the surface evolution with ion beam is an intrinsic property of the dynamics of the amorphous surface layer [15]. All above experimental findings and their theoretical justification raise questions on lack of a single physical mechanism

GNS-1480 cost on the origin and evolution of ripples on solid surface. In this work, we propose a new approach for explaining all ambiguity related to the origin of ripple formation. We argue that amorphous-crystalline interface (a/c) plays a crucial role in the evolution of ripples. We have shown that the ion beam-induced incompressible solid flow in amorphous layer starts the mass rearrangement at a/c interface which is responsible for ripple formation on the free surface rather than earlier mentioned models of curvature-dependent erosion and mass redistribution

at free surface. Presentation of the hypothesis In order to study the role of a/c interface in surface patterning of Si (100) surface during irradiation, we performed a series of experiments by preparing two GBA3 sets of samples with different depth locations of a/c interface. The variation in depth location of a/c interface is achieved by irradiating the Si surface using 50 keV Ar+ ion at a fluence of 5 × 1016 ions per square centimeter (for full amorphization) at different angles of incidence, viz, 60° (sample set A) and 0° (sample set B) with respect to surface normal. The depth location of a/c interface would be higher in set B samples as compared to set A samples due to higher projected ion range for 0° as compared to 60° ion beam irradiation. Figure 1a,b shows the schematic view for ion beam-stimulated damage range for AZD8931 solubility dmso off-normal incidence of ion beam at 60° (named as set A) and normal incidence (named as set B), respectively. Subsequently, to grow ripples in the second stage of irradiation, both sets of samples were irradiated at an angle of 60° wrt surface normal using 50 keV Ar+ ion beam, as shown in Figure 1c,d. For the set A samples, ion beam-stimulated damage effect will reach at a/c interface in the second stage irradiation while it remains inside the amorphous layer for set B samples due to deeper depth location of a/c interface.