Phys Rev B 1989, 40:1795–1805.CrossRef 25. Langford AA, Fleet ML, Nelson BP, Lanford WA, Maley N: SC79 mw Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon. Phys Rev B 1992, 45:13367–13377.CrossRef 26. Moss SC, Graczyk JF: Evidence of voids within the as-deposited structure of glassy silicon. Phys Rev Lett 1969, 23:1167–1171.CrossRef Quisinostat ic50 27. Bruggeman DAG: Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten
und Leitfähigkeiten der Mischkörper aus isotropen Substanzen. Ann Phys 1935, 416:636–664.CrossRef 28. Hessel CM, Henderson EJ, Veinot JGC: An investigation of the formation and growth of oxide-embedded silicon nanocrystals in hydrogen silsesquioxane-derived nanocomposites. J Epigenetics inhibitor Phys Chem C 2007, 111:6956–6961.CrossRef 29. Himpsel FJ, McFeely FR, Taleb-Ibrahimi A, Yarmoff JA, Hollinger G: Microscopic structure of the SiO 2 /Si interface. Phys Rev B 1988, 38:6084–6096.CrossRef 30. Niwano M, Katakura H, Takeda Y, Takakuwa Y, Miyamoto N, Hiraiwa A, Yagi K: Photoemission study of the SiO 2 /Si interface structure of thin oxide films on
Si(100), (111), and (110) surfaces. J Vac Sci Technol A 1991, 9:195–200.CrossRef 31. Smets AHM, van de Sanden MCM: Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment. Phys Rev B 2007, 76:073202.CrossRef 32. Anutgan T, Uysal S: Low temperature plasma production of hydrogenated nanocrystalline silicon thin films. Curr Appl Phys 2013, 13:181–188.CrossRef 33. Niwano M, Kageyama J-I, Kurita K, Kinashi K, Takahashi I, Miyamoto N: Infrared spectroscopy study of initial stages of oxidation of hydrogen-terminated Si surfaces stored in air. J Appl
Phys 1994, 76:2157–2163.CrossRef 34. Mahan AH, Xu Y, Williamson DL, Beyer W, Perkins JD, Vanecek M, Gedvilas LM, Nelson BP: Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 Å/s. J Appl Phys 2001, 90:5038–5047.CrossRef 35. Robertson J: Deposition mechanism of hydrogenated amorphous silicon. J Appl Phys 2000, 87:2608–2617.CrossRef GPX6 36. Kroll U, Meier J, Shah A, Mikhailov S, Weber J: Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution. J Appl Phys 1996, 80:4971–4975.CrossRef 37. Wen C, Xu H, Liu H, Li ZP, Shen WZ: Passivation of nanocrystalline silicon photovoltaic materials employing a negative substrate bias. Nanotechnology 2013, 24:455602.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions CW participated in the design of the study, carried out the experiments, and performed the statistical analysis, as well as drafted the manuscript. HX, WH, and ZPL participated in the design of the study and provided the experimental guidance.