The hole diameter can be controlled by varying the annealing time or annealing temperature, offering a new means of manipulating hole morphology for possible applications as templates for nanostructure nucleation. Finally, in an initial approach, the integration of the combined droplet/thermal etching process with heteroepitaxy has been demonstrated. https://www.selleckchem.com/products/epz-6438.html Acknowledgements The authors thank Stefano Sanguinetti for very helpfull discussions and the Deutsche Forschungsgemeinschaft for financial support via HA 2042/6-1 and GrK 1286. DEJ
acknowledges support from a Marie Curie International Incoming Fellowship. References 1. Wang Zh M, Liang BL, Sablon KA, Salamo GJ: Nanoholes fabricated by self-assembled see more gallium nanodrill on GaAs (100). Appl Phys Lett 2007, 90:113120.CrossRef 2. Strom NW, Wang ZM, Lee JH, AbuWaar ZY, Mazur YI, Salamo GJ: Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates. Nanoscale Res Lett 2007, 2:112.CrossRef 3. Lee JH, Wang ZM, Ware ME, Wijesundara KC, Garrido M, Stinaff EA, Salamo GJ: Super low density InGaAs semiconductor ring-shaped nanostructures. Crystal Growth Design 2008, 8:1945.CrossRef 4. Lee JH, Wang
ZM, Kim ES, Kim NY, Park SH, Salamo G J: Various quantum- and nano-structures by III-V AR-13324 droplet epitaxy on GaAs substrates. Nanoscale Res Lett 2010, 5:308.CrossRef 5. Alonso-González P, Martín-Sánchez J: Formation of lateral low density In(Ga)As quantum dot pairs in GaAs nanoholes. Crystal Growth Design 2009, 9:2525.CrossRef 6. Stemmann A, Hansen W, Heyn C h: Dynamics of self-assembled droplet etching. Appl Phys Lett 2009, 95:173110.CrossRef 7. Chikyow T, Koguchi N: MBE growth method for pyramid-shaped GaAs
micro crystals on ZnSe (001) surface using Ga droplets. Jpn J Appl Phys 1990, ifenprodil 29:L2093.CrossRef 8. Mano T, Watanabe K, Tsukamoto S, Koguchi N, Fujioka H, Oshima M, Lee CD, Leem JY, Lee HJ, Noh SK: Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy. Appl Phys Lett 2000, 76:3543.CrossRef 9. Kim JS, Koguchi N: Near room temperature droplet epitaxy for fabrication of InAs quantum dots. Appl Phys Lett 2004, 85:5893.CrossRef 10. Stemmann A, Schramm A, Welsch H, Hansen W, Heyn C h: Regimes of GaAs quantum dot self-assembly by droplet epitaxy. Phys Rev B 2007, 76:075317.CrossRef 11. Abbarchi M, Mastrandrea CA, Kuroda T, Mano T, Sakoda K, Koguchi N, Sanguinetti S, Vinattieri A, Gurioli M: Exciton fine structure in strain-free GaAs/Al 0.3 Ga 0.7 As quantum dots: extrinsic effects. Phys Rev B 2008, 78:125321.CrossRef 12. Stock E, Warming T, Ostapenko I, Rodt S, Schliwa A, Töfflinger JA, Lochmann A, Toropov AI, Moshchenko SA, Dmitriev DV, Haisler VA, Bimberg D: Single-photon emission from InGaAs quantum dots grown on (111) GaAs. Appl Phys Lett 2010, 96:093112.CrossRef 13. Heyn Ch: Kinetic model of local droplet etching. Phys Rev B 2011, 83:165302.CrossRef 14.